Eleftherios Iliopoulos
Curriculum Vitae
Personal Data
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Birth: |
26 July 1970, Athens,
Greece |
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Nationality: |
Hellenic |
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Work Address: |
Physics Dept., University
of Crete P.O. Box 2208 71003 Heraklion-Crete Greece |
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Contacts: |
Tel: +30 2810 394113 Fax: +30 2810 394106 Email: iliopoul@physics.uoc.gr |
Professional
|
Jan. 2009 - now |
Assistant Professor Physics Dept., University
of Crete |
|
Jan. 2009 - now |
Associated Faculty Member Institute of Electronic
Structure and Lasers (IESL) Foundation for Research and
Technology-Hellas (FORTH) |
|
Sept.2007-Dec.2008 |
Visiting Assistant
Professor (PD407) Physics Dept., University
of Crete |
|
Jan. 2007-Dec.2008 Jan.2004-Dec.2006 |
Research Scientist Institute of Electronic
Structure and Lasers (IESL) Foundation for Research and
Technology-Hellas (FORTH) Postdoctoral Researcher,
Physics Dept., University of Crete |
|
Jul.2002-Dec.2004 |
Military Service Meteorologist, Hellenic Air
Forces (HAF) |
Education
|
2002 |
Ph.D. in Electrical Engineering Boston University, Boston
MA, U.S.A. Center for Photonics
Research Thesis: “Growth Kinetics
and Investigations of Spontaneous Formation of Superlattices in AlxGa1-xN
Alloys” Advisor: T.D.Moustakas |
|
2001 |
Winter School in High
Resolution Transmission Electron
Microscopy Arizona State University,
Tempe AZ, U.S.A, |
|
1996 |
M.Sc. in Physics Ranked 1st in
Class Northeastern University,
Boston MA, U.S.A. Project: “Characterization
of High Speed/High Frequency Laser Diodes” (Research Laboratory of
Electronics-MIT) |
|
1994 |
B.Sc. in Physics (Ptychion) Physics Dept, National and
Kapodistrian University of Athens Thesis: “Spontaneous
Symmetry Breaking in ö4 Field Theories” |
Honors - Awards
ü Permanent Steering Committee Member of
EXMATEC (Expert Evaluation and Control of Compound Semiconductors Materials and
Technologies) biannual workshop
ü National representative and vice-president of
1st WP of European Research coordination project COST MP0805
ü Elected Board of Directors member of “Micro
& Nano Hellenic Scientific Society”
ü 11 invited talks in international
conferences
ü Appointed workpackage leader in ORAMA
project
ü Best poster award in MRS Fall 2000 Meeting
ü Research fellowships from ONR and DARPA
ü Hellenical Chemical Society Award
Research Achievements
ü Developed room temperature operating
AlGaN/GaN resonant tunneling diodes (RTDs)
ü Developed GaN QDs embedded in
dielectrics/Si for non-volatile memory devices applications
ü Identified the bandgap dependence of InAlN
alloys on composition and demonstrated its non-parabolic function relation
ü Developed high quality AlGaN/GaN
heterostructures with “state of the art” 2DEG
electrical properties for HEMT and EG-FET device applications.
ü Developed InGaN thin films in the entire
composition range and InAlN films lattice-
matched to GaN
ü Demonstrated the predominant role of
excited molecular species in the growth of III-Nitrides by plasma-assisted
molecular beam epitaxy
ü Reported for the first time the spontaneous
formation of superlattices in AlGaN alloys
ü Identified the growth kinetics mechanism
that controls the composition of AlGaN films in plasma-assisted molecular beam
epitaxy
ü Identified the dependence of AlGaN alloy
ordering on crystal polarity and kinetic conditions of growth and show its
effect on optical properties
ü Identified the dependence of GaN
photoluminescence on Si doping and developed a model to account for the width
of PL spectra
ü Reported the absence of Burstein-Moss
effect in heavily doped n-GaN films
Teaching
Experience
|
2011: 2008-now |
Organizer, “21st
Advanced Physics Summer School in Nanoelectronics”, Heraklion-Crete, July
2011 “Advanced Physics Labs”, Physics
Dept., Univ. Crete |
|
2008-2014 |
“Physics Labs II
(Electromagnetism), Physics Dept., Univ. Crete |
|
2007-now |
“Topics in Contemporary
Physics”, Physics Dept., Univ. Crete |
|
2006-now |
“Circuit Analysis”, Physics
Dept., Univ. Crete |
|
2004 |
“Semiconductor Physics”, in
Advanced Physics Summer School-2004, Physics Dept., Univ. Crete |
|
1998-2001 |
Part of graduate course “Solid
State Devices”, Elec. Eng. Dept, Boston University |
|
1995-1996 |
Teaching Assistant in “Modern
Physics” and “Astronomy and Astrophysics” classes, Physics Dept.,
Northeastern Univ. |
|
1994-1996 |
Teaching Assistant in “Physics
Labs”, Physics Dept., Northeastern Univ. |
Professional
Activities
ü Ex-Member of Board of Directors of “Micro
& Nano Hellenic Scientific Society”
ü Reviewer for international journals:
Applied
Physics Letters
Physical
Review B
Journal
of Applied Physics
Physica
Status Solidi
Optics
Express
Journal
of Crystal Growth
Microelectronics
Engineering
Applied
Surface Science
Thin
Solid Films
Conference
Committees’ participation
ü “13th Expert Evaluation and
Control of Compound Semiconductor Material and Technologies (EXMATEC 2016)”,
June 2016, Aveiro, Portugal: Steering Committee
ü “12th Expert Evaluation and
Control of Compound Semiconductor Material and Technologies (EXMATEC 2014)”, June
2014, Delphi, Greece: Chairman of Organizing Committee
ü “38th Workshop on Compound
Semiconductor Devices and Integrated Circuits (WOCSDICE 2014)”, June 2014,
Delphi, Greece: Vice-chairman of Organizing Committee
ü “5th International Conference on
Micro- Nano-electronics, Nanotechnology and MEMS (Micro&Nano 2012)”,
October 2012, Heraklion: Organizing and Program Committees’ member
ü “4th International Symposium on
Transparent Conductive Materials (TCM 2012)”, October 2012, Xersonissos,
Greece: Local Organizing Committee member
ü COST MP-0805 Spring Training School on
“Epitaxy and Structural Characterization of III-V-N Semiconductors”, April-May
2012, Heraklion, Greece: Organizing Committee
ü COST MP-0805 Workshop on “Site-controlled
Epitaxy”, May 2012, Heraklion, Greece: Organizing Committee
ü “13th International Conference
on Transparent Optical Networks (ICTON 2011)”, 26-30 June 2011, Stockholm,
Sweden: Scientific Program Committee member
ü “4th International Conference on
Micro- Nano-electronics, Nanotechnology and MEMS (Micro&Nano 2010)”, 12-15
Dec. 2010, Athens, Greece: Organizing and Program Committees’ member
ü “19th European Workshop on
Heterostructure Technology (HETECH 2010)”, 18-20 Oct. 2010, Fodele, Greece:
Organizing Committee member
ü “3rd International Symposium on
Transparent Conductive Materials (TCM 2010)”, 17-21 Oct.2010, Analipsi, Greece:
Local Program Committee member
Principal
Investigator in Research Grants
ü “High
Efficiency III-Nitride Semiconductors Photovoltaic Devices (NitPhoto)”, funded
by Greek National Program “Thales”, Jan. 2012-Oct.2015, amount 600 k€
ü “Hybrid
electroluminescence devices based on combination of light-emitting polymers and
III-Nitride semiconductors”, awarded by Research Promotion Foundation of
Cyprus, duration Jan.2011-Dec.2014, amount 54 k€
ü “UV-VIS tunable
wavelength photodetectors based on quantum dots-resonant tunneling diodes
III-Nitrides structures”, awarded by European Space Agency (E.S.A.), duration Oct.2007-Jun.2009,
amount 100 k€ + 250 k€
ü
“Lattice
properties and microstructure of new III-Nitride semiconductor
heterostructures”, Greek-Polish Bilateral Projects, awarded by General
Secretariat of Research and Technology-Greek Ministry of Development, started
2006, duration: 18 months, amount: 11 k€
Participant
Investigator in Research Grants
ü “Crete Center for Quantum Complexity and
Nanotechnology” (CCQCN), FP7-REGPOT-No316165, EU funding (9/2013-11/2016),
budget 4M€, Management Committee Member and Proposal co-author
ü “Oxide Materials towards a Mature
post-Silicon Electronics Era” (ORAMA), FP-7-NMP-246334, EU funding (10/2010-9/2014)
ü “Materials for Robust Gallium Nitride”
(MORGaN), Nanosciences, Nanotechnologies, Materials and New Production
Technologies (NMP) Large scale integrating project, Grant agreement no: 214610,
EU funding (11/2008 – 10/2011)
ü
“InAlN/(In)GaN Heterostructure Technology for Ultra-high Power
Microwave Transistor” (ULTRAGAN), IST STREP Contract no. FP6-006903, EU funding
(1/9/2005- 31/10/2008)
ü
“Interfacial phenomena at atomic resolution
and multiscale properties of novel III-V semiconductors” (PARSEM), MRTN-CT-2004-005583, EU funding (1/3/2005- 28/2/2009)
ü “Epitaxy and properties of novel
III-N heterostructures and nanostructures”, Pythagoras, funding from
Greek Ministry of Education (1/3/2004-31/8/2006)
ü
“New
Generation of GaN-based sensor arrays for nano- and pico-fluidic systems for
fast and reliable biomedical testing” (GaNano), NMP-2002-505641-1, EU funding (2004-2006)
Industrial
Cooperation
ü Participated in projects with EADS for the
development of EG-HEMTs for nanofluidic
and picofluidic applications
ü Participated in projects with Aixtron and
III-V Labs for the development of high power RF InAlN/GaN HEMT transistors
ü Participated in projects with
Lockheed-Martin Inc., EG&G Inc. (now part of Perkin-
Elmer Inc.) and BAE Inc. for
the development of ultraviolet and solar-blind detectors
ü Participated in projects with AsTex Inc.
for the development of ECR plasma source
Participated in projects with Epion Inc. for the development of III-Nitrides growth using gas cluster ion beam source
Publications
Statistics
|
Number
of publications in international refereed journals |
67 |
|
Number of publications in
international refereed conference proceedings |
20 |
|
Number
of Citations / Self-citations |
1353 / 98
|
|
h-index |
23 |
|
Data
from ISI-Web of Science, Scopus and Publishers Updated: 11 November 2016 |
|
Publications in international
refereed journals
[Number
of total-citations(self-citations) of publication]
1. S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, K. Tsagaraki, A. Kostopoulos, E. Aperathitis and E. Iliopoulos, “ Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates”, Thin Solid Films 611, 46 (2016)
2. E. Papadomanolaki, C. Bazioti, S.A. Kazazis, M. Androulidaki, G.P. Dimitrakopulos and E. Iliopoulos, “Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties”, J. Cryst. Growth 437, 20 (2016)
3. S. Eftychis, J. Kruse, T. Koukoula, Th. Kehagias, Ph. Komninou, A. Adikimenakis, K. Tsagaraki, P. Tzanetakis, E. Iliopoulos, A. Georgakilas, “Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires”, J. Cryst. Growth 442, 8 (2016)
2015
4. G. Itskos, A. Othonos, S.A. Choulis and E. Iliopoulos, “Förster resonant energy transfer from an inorganic quantum well to a molecular material: Unexplored aspects, losses, and implications to applications ”, J. Chem. Phys. 143, 214701 (2015) – Editor’s choice, Featured article Cited: 1(0)
5. C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walter, J. Smalc-Koziorowska, E. Pavlidou, Ph. Komninou, Th. Karakostas, E. Iliopoulos, G.P. Dimitrakopulos, “Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy”, J. Appl. Phys. 118, 155301 (2015) Cited: 3(1)
6. C. Bazioti, E. Papadomanolaki, Th. Kehagias, M. Androulidaki, G.P. Dimitrakopulos and E. Iliopoulos, “Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures” Phys. Status Solidi B 252, 1155 (2015) Cited: 2(0)
2014
7. V. Gkrana, K. Filintoglou, J. Arvanitidis, D. Christofilos, C. Bazioti, G. P. Dimitrakopulos, M. Katsikini, S. Ves, G.A. Kourouklis, N. Zoumakis, A. Georgakilas, and E. Iliopoulos, “Raman and photoluminescence mapping of InxGa1-xN (x~0.4) at high pressure: Optical determination of composition and stress”, Appl. Phys. Lett. 105, 092107 (2014)
2013
8. P. Dimitrakis, C. Bonafos, P. Normand, E. Papadomanolaki and E. Iliopoulos, “GaN quantum dots integrated in gate dielectric of metal-oxide-semiconductor structures for charge storage applications”, Appl. Phys. Lett. 102, 053117 (2013) Cited: 9(1)
9. P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, C. Bonafos, S. Schamm-Chardon, G. Benassayag and E. Iliopoulos, “Quantum dots for memory applications”, Phys. Status Solidi A 210, 1490 (2013) Cited: 9(0)
10. G. Itskos, X. Xristodoulou, E. Iliopoulos, S. Ladas, S. Kennou, M. Neophytou, S. Choulis, “Electronic and interface properties of polyfluorene films on GaN for hybrid optoelectronic applications”, Appl. Phys. Lett. 102, 063303 (2013) Cited: 5(1)
11. K.S. Daskalakis, P.S. Eldridge, G. Christmann, E. Trichas, R. Murray, E. Iliopoulos, E. Monroy, N.T. Pelekanos, J.J. Baumberg, P.G. Savvidis, “All-dielectric GaN microcavity: Strong coupling and lasing at room temperature ”, Appl. Phys. Lett. 102, 101113 (2013) Cited: 23(0)
2012
12. E. Tiras, M. Tanisli, N. Balkan, S. Ardali, E. Iliopoulos, A. Georgakilas, “Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra”, Phys. Status Solidi B 249, 1235 (2012) Cited: 1(0)
13. F.G. Kalaitzakis, E. Iliopoulos, G. Konstantinidis, N.T. Pelekanos, “Monolithic integration of nitride based transistor with light emitting diode for sensing applications”, Micr. Eng.90 , 33 (2012) Cited: 8(0)
2011
14. E. Trichas, N.T. Pelekanos, E. Iliopoulos, E. Monroy, K. Tsagaraki, A. Kostopoulos, P.G. Savvidis, “Bragg polariton luminescence from a GaN membrane embedded in an all dielectric microcavity”, Appl. Phys. Lett. 98, 221101 (2011) Cited: 7(0)
15. O. Domnez, M. Yilmaz, A. Erol, B. Ulug, M.C. Arikan, A. Ulug, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas, “Influence of high electron concentration on band gap and effective electron mass of InN”, Phys. Status Solidi B 248, 1172 (2011) Cited: 5(0)
16. M. Katsikini, E. Pinakidou, J. Arvanitidis, E.C. Paloura, S. Ves,
Ph. Komninou, Z. Bougrioua, E.
Iliopoulos, T.D. Moustakas, “Comparison of Fe and Si doping of GaN: An
EXAFS and Raman study”, Mat. Sci.
2010
17. A.O. Ajagunna, E. Iliopoulos, G. Tsiakatouras, K. Tsagaraki, M. Androulidaki, A. Georgakilas, “Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire”, J. Appl. Phys. 107, 024506 (2010) Cited: 18(0)
2009
18. N. Sofikiti, N. Chaniotakis, J. Grandal, M. Utrera, M.A. Sanchez-Garcia, E. Iliopoulos, A. Georgakilas, “Direct immobilization of enzymes on GaN and InN nanocolumns: The urease case study”, Appl. Phys. Lett. 95, 113701 (2009) Cited: 9(0)
19. S.L. Sahonta, G.P. Dimitrakopoulos, Th. Kehagias, J. Kioseoglou, A. Adikimenakis, E. Iliopoulos, A. Georgakilas, H. Kirmse, W. Neumann, Ph. Komninou, “Mechanism of compositional modulation in InAlN films grown by molecular beam epitaxy”, Appl. Phys. Lett. 95, 021913 (2009) Cited: 31(0)
20. A.P. Vajpeyi, A.O. Ajagunna, G. Tsiakatouras, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M.
Androulidaki, A. Georgakilas, “Spontaneous growth of III-Nitrides nanowires on
Si by molecular beam epitaxy”, Microelec.
21. A. Adikimenakis, K. Aretouli, E.
Iliopoulos, A. Kostopoulos, K. Tsagaraki, G. Kostantinidis, A. Georgakilas,
“High electron mobility transistors based on AlN/GaN heterostructures”, Microelec.
22. E. Trichas, M. Kayampaki, E. Iliopoulos, N.T. Pelekanos, P.G. Savvidis, “Resonantly enhanced selective photochemical etching of GaN”, Appl. Phys. Lett. 94, 173505 (2009) Cited: 13(0)
23. A. Adikimenakis, S.L. Sahonta, G.P. Dimitrakopoulos, J. Domagala, Th. Kehagias, Ph. Komninou, E. Iliopoulos, A. Georgakilas, “Effect of AlN interlayer in the structure of GaN-on-Si grown by molecular beam epitaxy”, J. Cryst. Growth 311, 2010 (2009) Cited: 7(0)
24. A.O. Ajagunna, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, A. Georgakilas, “InN films and nanostructures grown on Si(111) by RF-MBE” J. Cryst. Growth 311, 2058 (2009) Cited: 19(0)
2008
25. E. Iliopoulos, A. Adikimenakis, C. Giesen, M. Heuken, A. Georgakilas, “Energy bandgap bowing of InxAl1-xN alloys studied by spectroscopic ellipsometry”, Appl. Phys. Lett. 92, 191907 (2008) Cited:53(1)
26. P.D.C. King, T.D. Veal, A. Adikimenakis, H.Lu, L.R. Bailey, E. Iliopoulos, A. Georgakilas, W.J. Schaff, C.F. McConville, “Surface electronic properties of InAlN alloys”, Appl. Phys. Lett. 92, 172105 (2008) Cited:14(0)
27. G. Franssen, I. Gorczyga, T. Suski, A. Kaminska, J. Pereiro, E. Munoz, E. Iliopoulos, A. Georgakilas, S.B. Che, Y. Ishitani, A. Yoshikawa, N.E. Christensen, A. Svane, “Bowing of the bandgap pressure coefficients in InxGa1-xN alloys”, J. Appl. Phys. 103, 033514 (2008) Cited: 40(0)
28. G.P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.L. Sahonta, J. Kioseoglou, N. Vouroutzis, I. Hausler, W. Neumann, E. Iliopoulos, A. Georgakilas, Th. Karakostas, “Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy”, Phys. Status Solidi A 205, 2569 (2008) Cited: 6(1)
29. M. Trichas, C. Xenogianni, M. Kayambaki, P. Tsotsis, E. Iliopoulos, N.T. Pelekanos, P.G. Savvidis, “Selective photochemical etching of GaN films following laser lift-off”, Phys. Status Solidi A 205, 2509 (2008) Cited: 6(1)
30. M. Katsikini, F. Pinakidou, E.C. Paloura, Ph. Komninou and E. Iliopoulos, A. Adikimenakis, A. Georgakilas and E. Walter, “Effect of composition on the bonding environment of In in AnAlN and InGaN epilayers”, Phys. Status Solidi A 205, 2593 (2008) Cited: 4(1)
2007
31. E. Lioudakis,
32. V. Kambilafka, P. Voulgaropoulou, S. Dounis, E. Iliopoulos, M. Androulidaki, K. Tsagaraki, V. Saly, M. Ruinsky, P. Prokein, E Aperathitis, “The effects of nitrogen on the properties of zinc nitride thin films and their conversion into p-ZnO:N films”, Thin Solid Films 515, 8573 (2007) Cited: 26(0)
33. V. Kambilafka, P. Voulgaropoulou, S. Dounis, E. Iliopoulos, M. Androulidaki, K. Tsagaraki, V. Saly, M. Ruinsky, E Aperathitis, “Thermal oxidation of n-type ZnN films made by rf-sputtering and their conversion in p-type films”, Superlattices and Microstructures 42, 55 (2007) Cited: 33(0)
34. E. Lioudakis, A. Othonos and E. Iliopoulos, K. Tsagaraki, A. Georgakilas, “Femtosecond carrier dynamics of InGaN thin films grown on GaN(0001): effect of carrier-defect scattering”, J. Appl. Phys.. 102, 073104 (2007) Cited: 5(0)
35. E. Dimakis, E. Iliopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis, A. Georgakilas, “Growth optimization of an electron confining InN/GaN quantum well heterostructures”, J. Electr. Mat. 36, 373 (2007) Cited: 12(2)
36. E. Dimakis, J. Domagala, E. Iliopoulos, A. Adikimenakis, A. Georgakilas, “Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy”, Phys. Status Solidi A 204, 1996 (2007) Cited: 3(0)
37. Y. Alifragis, A. Volosirakis, N.A. Chaniotakis, G. Konstantinidis, E. Iliopoulos, A. Georgakilas, “AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions”, Phys. Status Solidi A 204, 2059 (2007) Cited: 19(1)
2006
38. E. Iliopoulos, A. Georgakilas,
39. E. Dimakis, E. Iliopoulos, K. Tsagaraki, A. Adikimenakis, A. Georgakilas, “Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett. 88, 191918 (2006) Cited: 47(6)
40. E. Dimakis, E. Iliopoulos,
K. Tsagaraki, A. Georgakilas, “Self-regulating mechanism of
41. E. Lioudakis, A. Othonos and
E.Dimakis,
42. E. Iliopoulos,
43. E. Dimakis, J.Domagala, A.Delimitis, Ph.Komninou, A. Adikimenakis, E. Iliopoulos, A. Georgakilas, “Structural properties of 10 ěm thck InN grown on Sapphire (0001)”, Superlattices and Microstructures 40, 246 (2006) Cited: 24(4)
44. J. Arvanitidis, M. Katsikini,
45. M. Koufaki, M. Sifakis, E. Iliopoulos, N. Pelekanos, M. Modreanu, V. Cimalla, G. Ecke, E. Aperanthitis, “Optical emission spectroscopy during fabrication of Indium-Tin-Oxynitride films by RF-sputtering” Appl. Surf. Sci. 253, 405 (2006) Cited: 8(0)
2005
46. E. Iliopoulos, A. Adikimenakis, E. Dimakis, K. Tsagaraki, A. Georgakilas, “Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth”, J. Cryst. Growth 278, 426 (2005) Cited: 52(9)
47. E. Dimakis, E. Iliopoulos, K. Tsagaraki, A. Georgakilas, “Physical model of InN growth on Ga-face GaN(0001) by molecular beam epitaxy”, Appl. Phys. Lett. 86, 133104 (2005) Cited:38 (7)
48. E. Dimakis, E. Iliopoulos*, K. Tsagaraki, Th. Kehagias, Ph. Komninou, A. Georgakilas, “Heteroepitaxial growth of In-face InN on GaN(0001) by plasma assisted molecular beam epitaxy”, J. Appl. Phys. 97, 113520 (2005) *corresponding author Cited: 72(9)
49. Th. Kehagias, A. Delimitis, Ph. Komninou and
50. Y. Alifragis, A. Georgakilas, G. Konstantinidis,
51. Th. Kehagias, E. Iliopoulos, A. Delimitis, G. Nouet, E. Dimakis, A. Georgakilas, Ph. Komninou, “Interfacial structure of MBE grown InN on GaN”, Phys. Status Solidi A. 202, 777 (2005) Cited:6(0)
52. J. Kioseoglou, A. Bere, Ph. Komninou, G.P. Dimitrakopoulos, G. Nouet, E. Iliopoulos, A. Serra, Th. Karakostas, “Atomic simulations and HRTEM observations of a Ó18 tilt grain boundary in GaN”, Phys. Status Solidi A. 202, 799 (2005) Cited: 2(0)
53. E. Dimakis, K. Tsagaraki, E. Iliopoulos, Ph. Komninou, Th. Kehagias, A. Delimitis and A. Georgakilas,
“Correlation between nucleation morphology and residual strain of
2004
54. E. Dimakis, G. Konstantinidis, K. Tsagaraki, A. Adikimenakis, E. Iliopoulos, A. Georgakilas, “The role of nucleation temperature in In-face InN on GaN (0001) growth by plasma assisted molecular beam epitaxy”, Superlattices and Microstructures 36, 497 (2004) Cited:35 (5)
2003
55. J.E. Downs, K.E.Smith, A.Y. Matsuura, I. Lindau and E. Iliopoulos, T.D.Moustakas, "Surface Degradation of InGaN Thin Films by Sputter-Anneal Processing: A Photoemission Electron Microscopy Study", J. Appl. Phys. 94, 5820 (2003) Cited: 3(0)
56. E. Iliopoulos, K.F. Ludwig, T.D. Moustakas, “Complex Ordering in Ternary Wurtzite Nitride Alloys”, J. Phys. Chem. Solids 64, 1525 (2003) Cited: 12(0)
2002
57. E. Iliopoulos, T.D. Moustakas, “Growth Kinetics of AlGaN Films by Plasma assisted Molecular Beam Epitaxy”, Appl. Phys. Lett. 81, 295 (2002) Cited: 60(1)
58. A. Bhattacharya, I. Friel, S. Iyer, E. Iliopoulos, A.V. Sampath, J. Cabalu, T.D. Moustakas, “High Reflectivity and Crack-free AlGaN/AlN Ultraviolet Distributed Bragg Reflectors”, J. Vac. Sci. Tech. B 20(3), 1229 (2002) Cited: 35(0)
2001
59. E. Iliopoulos, K.F. Ludwig, T.D.
Moustakas, Ph. Komninou, Th. Karakostas, G. Nouet, S.N.G. Chu, “Epitaxial
growth and self organized superlattice structure in AlGaN films grown by plasma
assisted molecular beam epitaxy” Mat. Sci.
60. T.D. Moustakas, E. Iliopoulos, A.V. Sampath, H.M. Ng, D. Doppalapudi, M. Misra, D. Korakakis, R. Singh, “Growth and Device Applications of III-Nitrides by MBE”, J. Cryst. Growth 227-228, 13 (2001) Cited: 40(1)
61. E. Iliopoulos, K.F. Ludwig, T.D. Moustakas, S.N.G. Chu, “Chemical ordering in AlGaN alloys grown by molecular beam epitaxy”, Appl. Phys. Lett. 78, 463 (2001) Cited: 47(3)
2000
62. A.V. Sampath, M. Misra, K. Seth, Y. Fedyunin, H.M. Ng, E. Iliopoulos, Z. Feit, T.D. Moustakas, “A comparative study of GaN diodes grown by MBE on sapphire and sapphire/HVPE-GaN substrates”, MRS Internet J. Nitride Semic. Res. 5S1, W11.1 (2000) Cited: 3(0)
1999
63. D. Doppalapudi, E. Iliopoulos, S.N. Basu, T.D. Moustakas, “Epitaxial growth of gallium nitride thin films on A-plane sapphire by molecular beam epitaxy”, J. Appl. Phys. 85, 3582 (1999) Cited: 48(0)
64. H.M. Ng, D. Doppalapudi, E. Iliopoulos, T.D. Moustakas, “Distributed Bragg reflectors based on AlN/GaN multilayers”, Appl. Phys. Lett. 74, 4070 (1999) Cited: 4(0)
65. H.M. Ng, D. Doppalapudi, E. Iliopoulos, T.D. Moustakas, “Distributed Bragg reflectors based on AlN/GaN multilayers”, Appl. Phys. Lett. 74, 1036 (1999) Cited: 73(3)
1998
66. E. Iliopoulos, D. Doppalapudi, H.M. Ng, T.D. Moustakas, “Broadening of near-band-gap photoluminescence in n-GaN films”, Appl. Phys. Lett. 73, 375 (1998) Cited: 81(2)
67. J.T. Torvic, J.I. Pankove and E. Iliopoulos, H.M. Ng, T.D. Moustakas, “Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy”, Appl. Phys. Lett. 72, 244 (1998) Cited: 17(0)
Publications
in international refereed conference proceedings
[Number
of total-citations(self-citations) of publication]
1. M. Katsikini, F. Pinakidou, E. C. Paloura, J. Arvanitidis, S. Ves, U. Reinholz, E. Papadomanolaki and E. Iliopoulos, “Simulation of the EXAFS and Raman spectra of InxGa1-xN utilizing the equation of motion routine of FEFF8”, J. of Physics: Conference Series 712, 012126 (2016)
2. P. Dimitrakis, P. Normand, C. Bonafos, E. Papadomanolaki and E. Iliopoulos, “GaN quantum dots as charge storage elementsfor memory devices” Mat. Res. Soc. Symp. Proc. 1430, 1091 (2012) Cited: 3(0)
3. S. Ardali, E. Tiras, M. Gunes, N. Balkan, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas, “Determination of dislocation densities in InN”, Phys. Stat. Sol. C 9, 997 (2012)
4. A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas, Ph. Komninou, “Structural characterization of InN epilayers grown on r-plane sapphire by plasma-assisted MBE”, Phys. Stat. Sol. C 9, 534 (2012) Cited: 3(0)
5. M. Gunes, N. Balkan, E. Tiras, S. Ardali, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas, “Superconductivity in MBE grown InN”, Phys. Stat. Sol. C 8, 1637 (2011) Cited: 1(0)
6. S. Ardali, E. Tiras, M. Gunes, N. Balkan, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas, “Longitudinal optical phonons in InN/GaN single and double heterostructures”, Phys. Stat. Sol. C 8, 1620 (2011) Cited: 2(0)
7. P. Dimitrakis, E. Iliopoulos, P. Normand, “Nanocrystal memory device utilizing GaN quantum dots by RF-MBE”, Mat. Res. Soc. Symp. Proc. 1250, 63 (2010)
8. M.A. diForte-Poisson, N. Sarazin, M. Magis, M. Tordjman, J. DiPersio, R. Langer, E. Iliopoulos, A. Georgakilas, Ph. Komninou, M. Guziewitz, E. Kaminska, A. Piotrowska, C. Gaquiere, M. Oualli, E. Chartier, E. Morvan, S. Delage, “LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications”, Phys. Stat. Sol. C 7, 1317 (2010) Cited: 5(0)
9. E. Kohn et al, “InAlN/GaN heterostructures for microwave power and beyond”, Tech. Digest IEDM 5424395 (2009) Cited: 2(0)
10. M. Androulidaki, N.T. Pelekanos, K. Tsagaraki,
11. E. Dimakis, A. Georgakilas, E. Iliopoulos, K. Tsagaraki, A. Delimitis, Ph. Komninou, H. Kirmse, W. Neumann, M. Androulidaki, N.T. Pelekanos, “InN quantum dots grown on GaN(0001) by molecular beam epitaxy”, Phys. Stat. Solidi C 3, 3983 (2006) Cited: 4(0)
12. Á. V. Sampath, E. Iliopoulos, A. Bhattacharya, I. Friel, S. Iyer, J. Cabalu, T.D. Moustakas, “Growth of III-Nitrides by MBE”, ECS Proceedings in Wide bandgap Semiconductors for Photonic and Electronic Devices and Sensors (May 2002)
13. Á.V. Sampath, A. Bhattacharya, S. Iyer, H.M. Ng, E. Iliopoulos, T.D. Moustakas, “MBE Growth of GaN using NH3 and Plasma Sources” Mat. Res. Soc. Symp. Proc. 639, G6.56 (2001) Cited: 1(0)
14. A.V. Sampath, M. Misra, K. Seth, Y. Fedyunin, H.M. Ng, E. Iliopoulos, Z. Feit, T.D. Moustakas, “A comparative study of GaN diodes grown by MBE on sapphire and sapphire/HVPE-GaN substrates”, Mat. Res. Soc. Symp. Proc. 595, W11.1.1 (2000)
15. M. Misra, A.V. Sampath, E. Iliopoulos, T.D. Moustakas, “GaN Schottky diode ultraviolet detectors grown by MBE” in Photodetectors: Materials and Devices V-Proceedings of SPIE 3984, 342 (2000) Cited: 1(0)
16. A.V. Sampath, E. Iliopoulos, K. Seth, M. Misra, H.M. Ng, P. Lamarre, Z. Feit, T.D. Moustakas, “GaN photodiodes by MBE on HVPE nad ELO-HVPE/Sapphire substrates” in Photodetectors: Materials and Devices V-Proceedings of SPIE 3984, 311 (2000) Cited: 1(0)
17. H.M. Ng, D. Doppalapudi, E. Iliopoulos, T.D. Moustakas, “Distributed Bragg Reflectors based on AlN/GaN multilayers” in III-V Nitride Materials and Processes, ECS Proc. 98-18, 87 (1999)
18. D. Doppalapudi, E. Iliopoulos, S.N. Basu, T.D. Moustakas, “Effect of nitridation and buffer in GaN films grown on A-plane sapphire”, Mat. Res. Soc. Symp. Proc. 482, 51 (1998) Cited: 1(0)
19. E. Iliopoulos, D. Doppalapudi, H.M. Ng, T.D. Moustakas, “ Near bandgap photoluminescence broadening in n-GaN films”, Mat. Res. Soc. Symp. Proc. 482, 655 (1998) Cited: 3(0)
20. T.D. Moustakas, R. Singh, D. Korakakis, D. Doppalapudi, H.M. Ng, A. Sampath, E. Iliopoulos, M. Misra, ”Phase Separation and Atomic Ordering in (AlGaIn)N alloys”, Mat. Res. Soc. Symp. Proc. 482, 193 (1998) Cited: 2(0)
Presenations in international
conferences
1. E. Papadomanolaki, S.A. Kazazis, C. Bazioti, F. Kalaitzakis, G.P. Dimitrakopulos and E. Iliopoulos, “InGaN Heteroexpitaxy on GaN(0001) for Photovoltaic Applications”, EXMATEC-2016, June 2016, Aveiro, Portugal
2. S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, and E. Iliopoulos, “Dielectric Functions and Bowing Parameter of InGaN Alloys in the Entire Composition Range”, 6th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs (Micro & Nano 2015), Athens, Greece, October 2015
3. S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, and E. Iliopoulos, “Rapid Thermal Annealing Effects on Polycrystalline InGaN Deposited on Fused Silica Substrates”, 6th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs (Micro & Nano 2015), Athens, Greece, October 2015
4. M. Katsikini, F. Pinakidou, E. C. Paloura, J. Arvanitidis, S Ves, U. Reinholz, E. Papadomanolaki, E. Iliopoulos, “Simulation of the EXAFS and Raman spectra of InxGa1-xN utilizing the equation of motion routine of FEFF8”, XXXI PCSSPMS, Thessaloniki, Greece, September 2015
5. C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, E. Pavlidou, Ph. Komninou, Th. Karakostas, E. Iliopoulos, and G. P. Dimitrakopulos, “Microstructural evolution in high alloy content InGaN films grown by molecular beam epitaxy”, XXXI PCSSPMS, Thessaloniki, Greece, September 2015
6. E. Papadomanolaki, S. Kazazis, A. Georgakilas, and E. Iliopoulos, “Growth Kinetics of InGaN Films by Plasma-Assisted Molecular Beam Epitaxy on (0001) GaN”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, August 2015
7. E. Papadomanolaki, C. Bazioti, S.A. Kazazis, M. Androulidaki, K. Tsagaraki, A. Georgakilas, G. P. Dimitrakopulos, and E. Iliopoulos, “Phase Separation, Structural Quality, and Optoelectronic Properties of InGaN films in the Entire Compositional Range Grown by RF-MBE”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, August 2015
8. S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, K. Tsagaraki, A. Kostopoulos, E. Aperathitis, and E. Iliopoulos, “Rapid Thermal Annealing Effects on Polycrystalline InGaN Deposited on Fused Silica Substrates”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, August 2015
9. S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, and E. Iliopoulos, “Dielectric Functions and Bowing Parameter of InGaN Alloys in the Entire Composition Range”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, August 2015
10. G.P. Dimitrakopulos , C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, E. Pavlidou, Ph. Komninou, Th. Karakostas, and E. Iliopoulos, “Modes of Defect Introduction and Indium Distribution in InGaN Epilayers Grown by Molecular Beam Epitaxy”, 11th International Conference in Nitride Semiconductors (ICNS-11), Beiging, China, August 2015
11. C. Bazioti, E. Papadomanolaki, Th. Kehagias, M. Androulidaki, G.P. Dimitrakopulos, and E. Iliopoulos, “Structural and optical properties of low-temperature InGaN thin layers and multi-quantum well grown by PAMBE”, EMRS Spring Meeting, Lille, France, May 2015
12. C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, Ph. Komninou, E. Iliopoulos, and G.P. Dimitrakopulos, “Strain accommodation and indium incorporation in InxGa1-xN epilayers grown by molecular beam epitaxy” , XIX Microscopy of Semiconducting Materials, Cambridge, Great Britain, March 2015
13. M. Katsikini, F. Pinakidou, E. C. Paloura, J. Arvanitidis, S Ves, U. Reinholz, E. Papadomanolaki, and E. Iliopoulos, “Simulation of the EXAFS and Raman spectra of InxGa1-xN utilizing the equation of motion routine of FEFF8”, 16th International Conference in X-ray absorption fine structure, Karlsruhe, Germany August 2015
14. E. Iliopoulos (INVITED), Carrier transport investigations by thermo-magneto-electric measurements: Theory and instrumentation for low mobility cases”, TCM-2014, Platanias-Chania, Greece, October 2014
15. C. Bazioti, Th. Kehagias, T. Walther, E. Papadomanolaki, E. Iliopoulos, G.P. Dimitrakopulos, “Strain relaxation of high In-content InGaN epilayers grown by PAMBE”, IMC-2014, Prague, Czech Republique, September 2014
16. C. Bazioti, G.P. Dimitrakopulos, Th. Kehagias, E. Papadomanolaki, and E. Iliopoulos, “Quantitative electron microscopy of high alloy content InGaN deposited by PAMBE: from quantum wells to epilayers”, E-MRS 2014 Fall Meeting, Warsaw, Poland, September 2014
17. C. Bazioti, Th. Kehagias, E. Papadomanolaki, E. Iliopoulos, G.P. Dimitrakopulos, “Structural Behavior of High Indium Content InGaN Quantum Wells grown by PAMBE”, EDS-2014, Göttingen, Germany, September 2014
18. C. Bazioti, Th. Kehagias, Th. Walter, E. Papadomanolaki, E. Iliopoulos, G.P. Dimitrakopulos, “Strain Induced Defect Microstructure of High Alloy Content InGaN Epilayers Grown by Plasma-assisted Molecular Beam Epitaxy” , EDS-2014, Göttingen, Germany, September 2014
19. E. Papadomanolaki, C. Bazioti, S. Kazazis, Th. Kehagias, A. Georgakilas, G.P. Dimitrakopulos, E. Iliopoulos, “High In Content InGaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy for Photovoltaic Applications”, XXX PCSSPMS, Heraklion, Crete, Greece, September 2014
20. Th. Kehagias, C. Bazioti, G. P. Dimitrakopulos, T. Walther, E. Papadomanolaki and E. Iliopoulos, “Strain accommodation in InGaN epilayers and interlayers with high alloy content towards efficient photovoltaics”, XXX PCSSPMS, Heraklion, Greece, September 2014
21. S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, K. Tsagaraki, A. Kostopoulos, E. Aperathitis, E. Iliopoulos, "Effect of Rapid Thermal Annealing on Polycrystalline InGaN Deposited on Fused Silica Substrates ", XXX PCSSPMS , Heraklion, Greece, September 2014
22. C. Bazioti, Th. Kehagias, E. Papadomanolaki, E. Iliopoulos, G.P. Dimitrakopulos, “Indium Incorporation, Interface properties, and Strain Relaxation at InGaN interlayers Grown by PAMBE”, 18th International Microscopy Congress, Prague, Czech Republic, September 2014
23. E. Papadomanolaki, C. Bazioti, T. Kehagias, A. Georgakilas, G. P. Dimitrakopulos and E. Iliopoulos, “RF-MBE of InGaN Epilayers on GaN(0001): Substrate Temperature Effects on Indium Incorporation Kinetics and Films’ Defect Structure”, IWN-2014, Wroclaw, Poland, August 2014
24. E. Papadomanolaki, L. Lymperakis, C. Bazioti, G. P. Dimitrakopulos and E. Iliopoulos, “Indium Surface Segregation in InGaN/GaN(0001) Heterostructures and Development of High Indium Content Multi-Quantum Wells”, IWN-2014, Wroclaw, Poland, August 2014
25. S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, K. Tsagaraki, A. Kostopoulos, E. Aperathitis and E. Iliopoulos, “Rapid Thermal Annealing Effects on Polycrystalline InGaN Thin Films Deposited on Fused Silica Substrates”, IWN-2014, Wroclaw, Poland, August 2014
26. C. Bazioti, Th. Kehagias, Th. Walther, E. Papadomanolaki, E. Iliopoulos, G. P. Dimitrakopulos, “Evolution of Strain Relaxation With Alloy Content in InGaN Thin Films Grown by PAMBE”, IWN-2014, Wroclaw, Poland, August 2014
27. C. Bazioti, Th. Kehagias, E. Papadomanolaki, E. Iliopoulos, G. P. Dimitrakopulos, “Study of the Structure and Strain variation of InGaN interlayers Deposited by PAMBE”, IWN-2014, Wroclaw, Poland, August 2014
28. E. Papadomanolaki, C. Bazioti, K. Tsagaraki, Th. Kehagias, A. Georgakilas, G.P. Dimitrakopulos and E. Iliopoulos, “Kinetics of Indium Incorporation in RF-MBE of InGaN films on GaN(0001) substrates for Photovoltaic Applications”, WOCSDICE-2014, June 2014, Delphi, Greece
29. S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, K. Tsagaraki, A. Kostopoulos, E. Aperathitis and E. Iliopoulos, “Rapid Thermal Annealing Effects on Polycrystalline InGaN Thin Films Deposited on Fused Silica Substrates”, WOCSDICE-2014, June 2014, Delphi, Greece
30. C. Bazioti, Th. Kehagias, E. Papadomanolaki, E. Iliopoulos, G. P. Dimitrakopulos, “Structural properties and strain relaxation of PAMBE-grown InGaN thin layers”, EXMATEC-2014, June 2014, Delphi, Greece
31. C. Bazioti, Th. Kehagias, T. Walther, E. Papadomanolaki, E. Iliopoulos, G.P. Dimitrakopulos, “Mesoscale phase separation and strain relaxation phenomena in high indium content InGaN epilayers grown by molecular beam epitaxy”, EXMATEC-2014, June 2014, Delphi, Greece
32. E. Papadomanolaki, M. Androulidaki, K. Tsagaraki, C. Bazioti, Th. Kehagias, G. Dimitrakopulos and E. Iliopoulos, “Molecular beam epitaxy of single phase InGaN films in the entire composition range for photovoltaic applications”, XXIX Panhellenic Solid State Physics & Material Science Conf., Athens, Greece, September 2013
33. E. Papadomanolaki, M. Androulidaki, K. Tsagaraki, C. Bazioti, Th. Kehagias, G. Dimitrakopulos and E. Iliopoulos, “Molecular beam epitaxy of single phase InGaN films: The role of growth temperature in alloy phase separation”, COST Action MP0805 Final Meeting, Istanbul, Turkey, September 2013
34. C. Bazioti, G. Dimitrakopulos, Th. Kehagias, E. Papadomanolaki and E. Iliopoulos, “Defect structure of high In-content InGaN epilayers grown by PAMBE”, E-MRS Fall 2013, Warsaw, Poland, September 2013
35. E. Gagaoudakis, G. Michael, I. Kortidis, V. Kampylafka, K. Tsagaraki, K. Moschovis, E. Aperathitis, E. Iliopoulos, G. Kiriakidis, “Sputtered Ni-Al-O as p-type sensor material for hydrogen and methane” Int. Conf. Advanced Electromaterials (ICAE 2013), Jeju, Korea, November 2013
36. K.S. Daskalakis, P.S. Eldridge, G. Christmann, E. Trichas, R. Murray, E. Iliopoulos, E. Monroy, N.T. Pelekanos, J.J. Baumberg, P.G. Savvidis, “All-dielectric GaN microcavity: Strong coupling and lasing at room temperature ”, ICNS-10, Washington DC, USA, August 2013
37. Th. Kehagias, G. Dimitrakopulos, A.O. Ajagunna, E. Iliopoulos, Ph. Komninou, A. Georgakials, “Effect of low temperature nucleation layer on the accommodation of InN on Si(111)” Int. Conf. on Intergranular and Interphase Boundaries in Materials (IIB 2013), Halkidiki, Greece, June 2013
38. K.S. Daskalakis, P.S. Eldridge, G. Christmann, E. Trichas, R. Murray, E. Iliopoulos, E. Monroy, N.T. Pelekanos, J.J. Baumberg, P.G. Savvidis, “All-dielectric GaN microcavity: Strong coupling and lasing at room temperature ”, Int. Conf. on Physics of Light-Matter Coupling in Nanostructures (PLMCN14), Hersonissos, Greece, May 2013
39. Ch. Dimizas, P. Dimitrakis, G. Deligeorgis, G. Konstantinidis and E. Iliopoulos, “The role of polarization fields in hysteresis phenomena in double barrier Al(Ga)N/GaN resonant tunneling diodes”, WOCSDICE 2013, Warnemünde, Germany, May 2013
40. E. Iliopoulos (INVITED), “Hybric III-nitride/polyfluorene heterostructures”, Workshop on Hybrid Materials, Nicosia, Cyprus, May 2013
41. K.S. Daskalakis, P.S. Eldridge, G. Christmann, E. Trichas, R. Murray, E. Iliopoulos, E. Monroy, N.T. Pelekanos, J.J. Baumberg, P.G. Savvidis, “All-dielectric GaN microcavity: Strong coupling and lasing at room temperature”, Hybrid Nanophotonics Workshop, Southampton, UK, March 2013
42. Ch. Dimizas, P. Dimitrakis, G. Deligeorgis and E. Iliopoulos, “Double barrier AlGaN/GaN resonant tunneling diodes: The effects of polarization fields”, EuroMBE 17th, Levi, Finland, March 2013
43. E. Iliopoulos (INVITED), “The 4-coefficient technique: Limits and expectations”, TCM2012-ORAMA Summer School, Hersonissos, Greece, October 2012
44. G. Itskos, X. Xristodoulou, E. Iliopoulos, S. Ladas, S. Kennou, M. Neophytou, S. Choulis, “Investigation and optimization of non-radiative energy transfer between Nitride quantum wells and light emitting diodes”, Micro&Nano 2012, Kokkini-Hani, Greece, October 2012
45. P. Dimitrakis, P. Normand, C. Bonafos, E. Papadomanolaki and E. Iliopoulos, “GaN QDs embedded in silicon oxide for charge storage applications”, Micro&Nano 2012, Kokkini-Hani, Greece, October 2012
46. P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, C. Bonafos, G. Benassayag and E. Iliopoulos (INVITED), “Quantum dots for memory applications”, ”, E-MRS 2012 Fall Meeting, Warsaw, Poland, September 2012
47. P. Dimitrakis, N. Nikolaou, P. Normand, C. Bonafos, E. Papadomanolaki and E. Iliopoulos, “GaN quantum dots for nano-floating memory devices”, E-MRS 2012 Spring Meeting, Strasbourg, France, May 2012
48. E. Iliopoulos (INVITED), “MBE growth of III-Nitrides”, COST MP-0805 Spring Training School on Epitaxy and Structural Analysis of III-V-N Semiconductor Nanostructures, Heraklion, Greece, April-May 2012
49. P. Dimitrakis, P. Normand, C. Bonafos, E. Papadomanolaki and E. Iliopoulos, “GaN quantum dots as charge storage elements for memory devices” MRS Spring 2012, San Fransisco, California, April 2012
50. S. Ardali, E. Tiras, M. Gunes, N. Balkan, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas, “Determination of dislocation densities in InN”, E-MRS 2011 Spring Meeting, Nice, France May 2011
51. A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas, Ph. Komninou, “Structural characterization of InN epilayers grown on r-plane sapphire by plasma-assisted MBE”, E-MRS 2011 Spring Meeting, Nice, France May 2011
52. G. Deligeorgis, P. Dimitrakis, X. Dimizas, A. Kostopoulos, G. Konstantinidis, R. Normand and E. Iliopoulos, “Negative differential resistance and charge trapping phenomena in (0001) Al(Ga)N/GaN double barrier resonant tunneling diodes”, Micro&Nano 2010, Athens, Greece, December 2010
53. P. Dimitrakis, P. Normand, C. Bonafos, K. Tsagaraki and E. Iliopoulos, “GaN quantum dots as charge storage elements for memory devices”, HETECH 2010, Fodele, Greece, October 2010
54. A. Speliotis, E. Iliopoulos, P. Normand, P. Dimitrakis, “Indium Tin Oxide layers sputtered on Si substrates for optoelectronic applications” TCM 2010, Analipsi, Greece, October 2010
55. P. Dimitrakis, E. Iliopoulos, P. Normand, “Nanocrystal memory device utilizing GaN quantum dots by RF-MBE”, MRS Spring 2010, San Francisco, California, April 2010
56. E. Iliopoulos (INVITED), “MBE growth of InN and InGaN alloys”, COST MP0805 training school “New Trends in III-V-M materials and devices” & ICO-Photonics 2009 Conf, Delphi, Greece, October 2009
57. E. Iliopoulos (INVITED), “Advancing III-Nitrides epitaxy: From kinetics to new device applications”, XXV Panhellenic Solid State Physics & Material Science Conf., Thessaloniki, Greece, September 2009
58. G. Tsiakatouras, K. Tsagaraki, J. Domagala, J. Smalc-Koziorowska, G. P. Dimitrakopulos, Ph. Komninou, E. Iliopoulos and A. Georgakilas, “Effect of surface kinetics in the growth of a-plane GaN on r-plane sapphire by molecular beam epitaxy”, HETECH 2009, Günzburg, Germany, November 2009
59. E. Iliopoulos, A. Adikimenakis, M. Androulidaki, A. O. Ajagunna, M. Heuken, C. Giesen, J. F. Carlin, M. A. di Forte-Poisson, S. L. Delage, Th. Kehagias, Ph. Komninou, A. Georgakilas, “Bandgap and optical properties of InAlN films lattice matched to GaN”, ISCN-8, Jeju, Korea, October 2009
60. A. O. Ajagunna, G. Tsiakatouras, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, A. Georgakilas, “Molecular beam epitaxy of a-plane InN films on r-plane sapphire”, ISCN-8, Jeju, Korea, October 2009
61. A. O. Ajagunna, E. Iliopoulos, K. Tsagaraki, G. Tsiakatouras, A. Georgakilas, “Thickness dependence of electrical properties of c- and a-plane InN films”, E-MRS 2009, Warsaw, Poland, September 2009
62. E. Iliopoulos (INVITED), “Recent advances in MBE growth of InN and InGaN alloys”, Mechanical Engineering dept. Colloquium, University of Cyprus, Nicosia, Cyprus, April 2009
63. E. Iliopoulos, E. Dimakis, A. Adikimenakis, G. Georgakilas (INVITED) “InN and high In-content alloys by RF-MBE: kinetics, properties and applications”, HETECH 2008, Venice, Italy, November 2008
64. E. Iliopoulos, A. Adikimenakis, C. Giesen, M. Heuken, A. Georgakilas, “Optical bandgap bowing and dielectric functions of InAlN alloys in the entire compositional range studied by spectroscopic ellipsometry”, IWN 2008, Montreux, Switzerland, October 2008
65. T. Veal, P.D. King, C.F. McConville, A.
Adikimenakis, E. Iliopoulos, A.
Georgakilas, H. Liu, W.J. Schaff, C.E. Kendrick, S.M. Durbin, “III-Nitride band
offsets and surface electronic properties of undoped and Mg-doped In(Ga,Al)N
alloys”, IWN 2008, Montreux,
Switzerland, October 2008
66. A. Adikimenakis, M. Alomari,
67. A. Ajagunna, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, A. Georgakilas, “InN dilms and nanostructures on Si(111) by RF-MBE”, 15th Int. Conf. on Molecular Beam Epitaxy MBE 2008, Vancouver, Canada, August 2008
68. A. Adikimenakis, M. Alomari, E. Kohn, K. Aretouli, A. Kostopoulos, E. Iliopoulos, K. Tsagaraki, A. Ajaguna, G. Kostantinidis, A. Georgakilas, “High electron mobility transistors based on AlN/GaN heterojunction”, 34th Int. Conf. on Micro and Nano Eng. MNE 2008, Athens, Greece, September 2008
69. A. Adikimenakis, E. Iliopoulos, C. Giesen, M. Heuken, G. Tsiakatouras, A. Georgakilas, “Molecular beam epitaxy and bandgap of InAlN alloys”, Int. Conf. on Elec. Mat. IUMRS-ICEM 2008, Sydney, Australia, August 2008
70. G. Tsiakatouras, K. Tsagaraki, E. Iliopoulos, A. Georgakilas, “Formation of a periodic array of steps on r-plane sapphire surface and its influence on a-plane GaN nucleation”, 15th Int. Conf. on Molecular Beam Epitaxy MBE 2008, Vancouver, Canada, August 2008
71. A. Adikimenakis, E. Iliopoulos, C. Giesen, M. Heuken, G. Tsiakatouras, K. Tsagaraki, A. Georgakilas, “Growth and bandgap of InxAl1-xN with 0<x<1 by plasma assisted MBE”, 15th Int. Conf. on Molecular Beam Epitaxy MBE 2008, Vancouver, Canada, August 2008
72. A.P. Vajpeyi, O. Ajagunna, G. Tsiakatouras, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, A. Georgakilas, “Spontaneous growth of III-N nanowires on Si by molecular beam epitaxy”, 34th Int. Conf. on Micro and Nano Eng. MNE 2008, Athens, Greece, September 2008
73. E. Iliopoulos, E. Dimakis, A. Georgakilas (INVITED)
“
74. E. Iliopoulos, A. Adikimenakis, C. Giesen, M. Androulidaki, G. Tsiakatouras, A. Georgakilas, “Optical properties of InAlN (0001) alloys in the entire composition range”, 3rd Int. Conf. Micro & Nano 2007, Athens, Greece, October 2007
75. A. Adikimenakis, E. Iliopoulos, G. Tsiakatouras, K. Tsagaraki, A. Georgakials, “Growth and characterization of InAlN/GaN heterostructures by plasma assisted molecular beam epitaxy”, 3rd Int. Conf. Micro & Nano 2007, Athens, Greece, October 2007
76. A.O. Ajagunna, A. Vajpeyi, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, A. Georgakilas, “Molecular beam epitaxy of InN directly on Si(111) substrates”, 3rd Int. Conf. Micro & Nano 2007, Athens, Greece, October 2007
77. G.P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.L. Sahonta, J. Kioseoglou, N. Vouroutzis, I. Hausler, W. Neumann, E. Iliopoulos, A. Georgakilas, Th. Karakostas, “Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy” Micro & Nano, Athens, Greece, October 2007
78. G. Franssen, T. Suski, A. Kaminska,
79. E. Iliopoulos, E. Dimakis, K. Tsagaraki, A. Georgakilas, “Development of InN based heterostructures and nanostructures”, Int. Workshop on Nitrides based Nanostructures, Harnauck Haus, Berlin, Germany, February 2007
80. E. Dimakis, E. Iliopoulos, A. Delimitis, Ph. Komninou, A. Georgakilas, “The effect of crystal defects on electron concentration and mobility in InN”, Int. Workshop on Nitrides based Nanostructures, Harnauck Haus, Berlin, Germany, February 2007
81. E. Dimakis, E. Iliopoulos, J. Domagala, K. Tsagaraki, A. Georgakilas, “Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy”, Int. Workshop on Nitrides based Nanostructures, Harnauck Haus, Berlin, Germany, February 2007
82. A. Adikimenakis, E. Iliopoulos, M. Zervos, T. McMullen, G. Konstantinidis, A. Georgakilas, “Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN”, Int. Workshop on Nitrides based Nanostructures, Harnauck Haus, Berlin, Germany, February 2007
83. A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, G. Tsiakatouras, A. Georgakilas, “Growth and properties of InAlN/GaN and InAlN/AlN heterostructures grown by RF-MBE”, Int. Workshop on Nitrides based Nanostructures, Harnauck Haus, Berlin, Germany, February 2007
84. E. Iliopoulos,
85. E. Iliopoulos,
86.
87. E. Iliopoulos,
88. E. Iliopoulos, A. Adikimenakis,
89. Y. Alifragis, A. Georgakilas, G. Kostantinidis, E. Iliopoulos, T. McMullen,
90.
91. V. Kambilafka, P. Voulgaropoulou,
92. E. Iliopoulos, A. Adikimenakis,
93. Y. Alifragis, E. Iliopoulos, M. Zervos, A. Adikimenakis, M. Sfendourakis, N. Chaniotakis, G. Konstantinidis, A. Georgakilas, “Design and fabrication of AlGaN/GaN high electron mobility transistor sensors for analysis of aqueous nano- and pico- droplets”, HETECH 2005 Workshop, Smolenice, Slovakia, October 2005
94. E. Iliopoulos, E. Dimakis, K. Tsagaraki, A. Georgakilas, “Biaxial strain and Poisson ratio in InN films grown heteroepitaxially on GaN (0001) by plasma assisted molecular beam epitaxy”, E-MRS Fall Meeting 2005, Warsaw, Poland, September 2005
95. E. Dimakis, E. Iliopoulos, K. Tsagaraki, P. Gladkov, Ph. Komninou, A. Delimitis, Th. Kehagias, A. Georgakilas, “Properties of MBE-grown InN (0001) films”, E-MRS Fall Meeting 2005, Warsaw, Poland, September 2005
96. E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, N.T. Pelekanos, “InGaN and InAlN alloys grown in the entire composition range by plasma assited molecular beam epitaxy”, E-MRS Fall Meeting 2005, Warsaw, Poland, September 2005
97. E. Dimakis, E. Iliopoulos, A. Georgakilas, “Heteroepitaxial growth of In-face InN on GaN (0001) by plasma assisted molecular beam epitaxy”, 13th European MBE Workshop, Griendelwald, Switzerland, March 2005
98. Th. Kehagias, E. Iliopoulos, A. Delimitis, E. Dimakis, A. Georgakilas, G. Nouet, Ph. Komninou, “Misfit accommodation of MBE grown InN on GaN”, International Workshop on Nitrides 2004, Pittsburgh, Pennsylvania, July 2004
99. E. Iliopoulos and T.D. Moustakas (INVITED), “MBE of III-Nitride alloys”, National Synchrotron Light Source Workshop “In-situ studies of material processing”, Brookhaven, New York, May 2002
100. E. Iliopoulos, D. Doppalapudi, K.F. Ludwig, T.D. Moustakas (INVITED), “Phase separation and atomic ordering in InGaN and AlGaN alloys grown by MBE”, 7th Wide bandgap III-Nitrides Workshop, Richmond, Virginia, March 2002
101. E. Iliopoulos, K.F. Ludwig, T.D. Moustakas, “Epitaxial growth kinetics of AlGaN films by molecular beam epitaxy and their effects on composition, optical properties and chemical ordering”, MRS Fall 2001, Boston, Massachusetts, December 2001
102. E. Iliopoulos, S. Iyer, J. Cabalu, T.D. Moustakas, “Epitaxial growth kinetics of AlGaN films by plasma assisted molecular beam epitaxy”, North America MBE-2001, Providence, Rhode Island, October 2001
103. E. Iliopoulos, K.F. Ludwig, T.D. Moustakas, J. Cai, F.A. Ponce, “Effect of crystal polarity and kinetics conditions of growth on ordering and optical properties of AlGaN alloys”, ICNS-4, Denver, Colorado, July 2001
104. E. Iliopoulos, D. Doppalapudi, K.F. Ludwig, T.D. Moustakas, P. Komninou, T. Karakostas, G. Nouet, S.N.G. Chu. (INVITED) “Ordering in nitride alloys”, Lawrence Symposium on Critical Issues in Epitaxy, Scotsdale, Arizona, January 2001
105. E. Iliopoulos, K.F. Ludwig, T.D. Moustakas, S.N.G. Chu, P. Komninou, T. Karakostas, “Long range atomic ordering in AlGaN films grown by plasma assisted molecular beam epitaxy”, MRS Fall 2000, Boston, Massachusetts, December 2000
106.
T.D. Moustakas,
107. E. Iliopoulos, K.F. Ludwig, T.D. Moustakas, S.N.G. Chu, “Ordering in AlGaN alloys”, ECS 2000 Meeting, Denver, Colorado, June 2000
108. E. Iliopoulos, D. Doppalapudi, H.M. Ng, T.D. Moustakas, “Broadening of near bandgap photoluminescence in n-GaN films”, 5th GaN Workshop, St. Louis, Missouri, March 1998
109. E. Iliopoulos, D. Doppalapudi, H.M. Ng, T.D. Moustakas, “Near bandgap photoluminescence broadening in n-GaN films”, MRS Fall 1997 Boston, December 1998